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Investigation of heavy fermion and dense Kondo systems in Ce-based ternary silicides

机译:铈基三元硅化物中重费米子和致密近藤系统的研究

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摘要

Measurements of the magnetic contribution to the electric resistivity, static magnetic susceptibility, and low temperature heat capacity of CePtSi are reported in this work. A logarithmic increase of magnetic resistivity is observed with the decrease of temperature in the higher temperature region. This is one of the characteristic features of dense Kondo system. This compound has a large value of the low-temperature magnetic susceptibility ((chi)(,m)(2.4K) = 24.9 x 10(\u27-3) cm(\u273)/mol) and, characteristic of heavy fermion compounds, an enormous coefficient of the electronic specific heat, (gamma) (TURN) 800 mJ/ mol K(\u272). AC magnetic susceptibility measurements indicate that this compound neither orders magnetically nor is superconducting above 70 mK;To understand the nature and mechanism of the heavy fermion compound CePtSi, a number of isostructural pseudoternary systems are investigated by studying the variations of lattice parameters, static magnetic susceptibility and magnetic contribution to the resistivity;The magnetic properties of narrow band metals ranging from heavy fermions to spin fluctuation compounds to mixed-valence materials are displayed in the series Ce(Pt(,1-x)Ni(,x))Si. The first evidence also has been found for the transition from heavy fermion behavior to a ferromagnetic dense Kondo state in the static magnetic susceptibility and resistivity in the series CePt(,x)Si. These studies confirm that f-ligand hybridization is associated with the formation of the heavy fermion state in the system CePtSi;Lastly, the semi-heavy fermion system CeSi(,x) (1.60 (LESSTHEQ) x (LESSTHEQ) 1.90) is examined. The rapid decrease of the magnetic ordering temperatures resulting in a nonmagnetic state as the f-f atomic separations increase in the region 1.80 (LESSTHEQ) x (LESSTHEQ) 1.90, indicates that;f-ligand hybridization is the dominant mechanism of f-electron delocalization in this system; *DOE Report IS-T-1279. This work was performed under contract No. W-7405-Eng-82 with the U.S. Department of Energy.
机译:这项工作报告了对CePtSi的电阻率,静态磁化率和低温热容的磁性影响的测量结果。在较高温度区域中,随着温度的降低,观察到了电阻率的对数增加。这是密集的近藤系统的特征之一。该化合物具有较大的低温磁化率值((chi)(,m)(2.4K)= 24.9 x 10(\ u27-3)cm(\ u273)/ mol),并且是重费米子化合物的特征,电子比热的巨大系数γ(TURN)800 mJ / mol K(\ u272)。交流磁化率测量表明,该化合物在70 mK以上不具有磁性,也不具有超导性;为了解重费米子化合物CePtSi的性质和机理,通过研究晶格参数,静态磁化率的变化,研究了许多同构伪三元体系。 Ce(Pt(,1-x)Ni(,x))Si系列化合物显示了从重铁原子到自旋涨落化合物再到混合价材料等窄带金属的磁性。还发现了在CePt(,x)Si系列的静态磁化率和电阻率下,从重费米子行为过渡到铁磁致密近藤状态的第一个证据。这些研究证实,f-配体杂交与CePtSi系统中重费米子态的形成有关;最后,研究了半重费米子系统CeSi(,x)(1.60(LESSTHEQ)x(LESSTHEQ)1.90)。随着ff原子间距在1.80(LESSTHEQ)x(LESSTHEQ)1.90区域内的增加,磁性有序温度的迅速下降导致了非磁性状态,表明; f-配体杂化是f电子离域的主要机制。系统; * DOE报告IS-T-1279。这项工作是根据与美国能源部签订的W-7405-Eng-82合同进行的。

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    Lee, Wun-Hsin;

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  • 年度 1987
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